RDS(ON) < 90mΩ @ VGS=10V RDS(ON) < 115mΩ @ VGS=4.5V DS = 100V, ID = 15A Design of high-density cells for reduced Rdson Completely described avalanche current and voltage Excellent consistency and stability with a high EAS A great bundle for effective heat dissipation Completely tested by UIS! Every DVD has been tested! Absolute Maximum Scores: 100V is the drain-source voltage (VDS). ±20V is the gate-source voltage (VGS). 15A is the continuous drain current (ID). 40A is the pulsed drain current (IDM). Maximum Power Dissipation: 31W at Tc=25°C Energy of Single Pulse Avalanche (EAS): 21 mJ Junction and Storage Operations Range of Temperature: -55 to 175°C Junction-to-Case Thermal Resistance (RθJC): 4.8 °C/W